Oxford Mixed ICP-RIE with Atomic Layer Etching

The Oxford Mixed ICP-RIE system has both Freon and Cl chemistry allowing users to etch dielectrics and a wider variety of semiconductor materials than the other ICP tools. The tool is load-locked and is currently configured to etch small samples through 100mm wafers. It is capable of processing at temperatures from -10°C up to 50°C. Metals are allowed in the system. Etch gases are BCl3, Cl2, CHF3, SF6, N2, Ar, O2, and H2.