Aixtron III-V MOCVD GaAs, InP, GaN
The Aixtron MOCVD reactor can be used to grow both III-V and III-N compound semiconductor material systems. It features a Closed Coupled Showerhead and can be configured for two inch through 100mm wafers. It has 12 metalorganic & 7 hydride gas lines including TMGa, TEGa, TMln, TMAl, PH3, AsH3, NH4, TMSb, DMZn, CBr4, and Si2H6. The substrate heater can go to 1200 °C. It is available for internal, external and company use.