cleanroom fab person

PlasmaLab Plasma-Enhanced Chemical Vapor Deposition System

PlasmaLab Plasma-Enhanced Chemical Vapor Deposition System

Photo of PlasmaLab Plasma-Enhanced Chemical Vapor Deposition System

Silicon dioxide, silicon oxy - nitride and amorphous silicon can be deposited at low temperatures (100-300 C) using this plasma enhanced chemical vapor deposition (PECVD) system.(Users desiring Silicon Nitride should use the STS PECVD). Due to its low temperature operation, this system is ideal for deposition on compound semiconductor and polymer substrates.

Features:

Low pressure plasma decomposition / reaction of silane & other gases predominantly to form dielectrics for passivation & masking layers at low temperatures

  • 300 W power supply
  • 9”diameter substrate electrode
  • Gases: SiH4, N2O, NH3, CF4/O2 (cleaning)
  • Typical process pressure: 500 - 1000 millitor
  • Standard Processes: Deposition of SiO2, Si3N4, amorphous Si
  • Microprocessor controlled

Plasmalab PECVD Instructions (pdf)