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Oxford Instruments Plasmalab System100 Freon ICP RIE

Oxford Instruments Plasmalab System100 Freon ICP RIE

Photo of Oxford Instruments Plasmalab System100 ICP RIE

The Oxford Instruments Inductively Coupled Plasma Reactive Ion Etch system is used for the etching Si3N4, SiO2 and Si. The tool is load-locked and is currently configured to handle 4-inch wafers.

The Oxford system has an optical emission endpoint detector. It is capable of processing at temperatures from -20°C up to 50°C.

SU8, Kapton tape and LiNbO3 are not allowed in the system.

The gases connected to the process chamber are: SF6, C4F8, O2, Ar, CHF3, CF4, and CH2F2.

Operating Procedure