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Simeon Bogdanov

Simeon Bogdanov
Simeon Bogdanov

Simeon Bogdanov

Assistant Professor
  • Electrical and Computer Engineering

For more information

Education

  • Ph.D. Electrical Engineering, Northwestern University, Evanston, IL (2014)
  • M.Sc. Microelectronics, Royal Institute of Technology, Stockholm, Sweden (2008)
  • B.Sc. Physics, Ecole Polytechnique, Palaiseau, France (2007)

Academic Positions

  • Postdoctoral Research Associate, Purdue University, West Lafayette, IN (04/2014 - 12/2019)

Professional Registrations

  • Member of the Optical Society of America
  • Member of the IEEE Photonics Society

Research Areas

  • Quantum Nanoelectronics and Nanophotonics

Selected Articles in Journals

  • S.I. Bogdanov, O.A. Makarova, X. Xu, Z.O. Martin, A.S. Lagutchev, M. Olinde, D. Shah, S.N. Chowdhuri, A.R. Gabidullin, I.A. Ryzhikov, I.A. Rodionov, A.V. Kildishev, S.I. Bozhevolnyi, A. Boltasseva, V.M. Shalaev and J.B. Khurgin, "Ultrafast quantum photonics enabled by coupling plasmonic nanocavities to strongly radiative antennas", accepted for publication in Optica
  • N. Saveskul, N.Titova, E.M. Baeva, A.V. Semenov, A.V. Lubenchenko, S. Saha, H. Reddy, S.I. Bogdanov, E.E. Marinero, V.M. Shalaev, A. Boltasseva V.S. Khrapai, A.I. Kardakova, and G.N. Goltsman, “Superconductivity Behavior in Epitaxial TiN Films Points to Surface Magnetic Disorder”, Phys. Rev. Applied, 12, 054001 (2019)
  • S.I. Bogdanov, A. Boltasseva and V.M. Shalaev, “Overcoming quantum decoherence with plasmonics”, Science, 364, 532 (2019)
  • S.I. Bogdanov, M.Y. Shalaginov, A.S. Lagutchev, C.-C. Chiang, D. Shah, A.S. Baburin, I.A. Ryzhikov, I.A. Rodionov, A. Boltasseva and V.M. Shalaev, “Ultrabright and ultrafast roomtemperature anti-bunched emission from a nitrogen-vacancy center in a diamond nanocrystal”, Nano Letters, 18, 4837 (2018)
  • S.K.H. Andersen, S.I. Bogdanov, Y. Xuan, O. Makarova, M.Y. Shalaginov, A. Boltasseva, V.M. Shalaev and S. Bozhevolnyi, "Hybrid plasmonic bullseye antennas for efficient photon collection", ACS Photonics, 5, 692 (2018)
  • O.A. Makarova, M.Y. Shalaginov, S.I. Bogdanov, U. Guler, A. Boltasseva, A.V. Kildishev and V.M. Shalaev, “Patterned multilayer metamaterial for fast and efficient photon collection from dipolar emitters”, Opt. Lett. 42 , 3968 (2017)
  • S.I. Bogdanov, M.Y. Shalaginov, P. Kapitanova, J. Liu, M. Ferrera, A. Lagutchev, P. Belov, J. Irudayaraj, A. Boltasseva and V. Shalaev, “Spin contrast in Purcell-enhanced nitrogenvacancy center ensembles in nanodiamonds”, Phys. Rev. B 96, 035146 (2017)
  • S.I. Bogdanov, M.Y. Shalaginov, A. Boltasseva and V.M. Shalaev, “Material platforms for integrated quantum photonics” Opt. Mat. Exp. 7, 111 (2017)
  • M. Razeghi, A. Haddadi, A.M. Hoang, G. Chen, S.I. Bogdanov, S.R. Darvish, F. Callewaert, P.R. Bijjam and R. McClintock, "Antimonide-based type-II superlattices: a superior candidate for the third generation of infrared imaging systems" J. of Elec. Mat. 43(8), 2802 (2014)
  • G. Chen, A.M. Hoang, S.I. Bogdanov, A. Haddadi, S.R. Darvish and M. Razeghi, “Effect of sidewall surface recombination on the quantum efficiency in a Y2O3 gated type-II InAs/GaSb long-infrared photodetector array” Appl. Phys. Lett. 103, 223501 (2013)
  • G. Chen, A.M. Hoang, S.I. Bogdanov, P.R. Bijjam, B.-M. Nguyen and M. Razeghi, “Investigation of impurity in type-II InAs/GaSb superlattices via capacitance-voltage measurement” Appl. Phys. Lett. 103, 033512 (2013)
  • G. Chen, E.K. Huang, A.M. Hoang, S.I. Bogdanov, S.R. Darvish and M. Razeghi, “Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors” Appl. Phys. Lett. 101, 213501 (2012)
  • M. Razeghi, A. Haddadi, A.M. Hoang, E.K. Huang, G. Chen, S.I. Bogdanov, S.R. Darvish, F. Callewaert and R. McClintock “Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices” Infrared Physics and Technology, 59, 41 (2012)
  • B.M. Nguyen, G. Chen, A.M. Hoang, S. Abdollahi Pour, S.I. Bogdanov, and M. Razeghi, “Effect of contact doping on superlattice-based minority-carrier unipolar detectors” Appl. Phys. Lett. 99, 033501 (2011)
  • S.I. Bogdanov, B.M. Nguyen, A.M. Hoang and M. Razeghi, “Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes” Appl. Phys. Lett. 98, 183501 (2011)
  • B.M. Nguyen, S.I. Bogdanov, S. Abdollahi Pour, and M. Razeghi, “Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection,” Appl. Phys. Lett. 95, 183502 (2009)
  • S. Abdollahi Pour, B.M. Nguyen, S.I. Bogdanov, E.K. Huang, and M. Razeghi, “Demonstration of high performance long wavelength infrared type II InAs/GaSb superlattice photodiode grown on GaAs substrate,” Appl. Phys. Lett. 95, 173505 (2009)
  • B.M. Nguyen, D. Hoffman, E.K. Huang, S.I. Bogdanov, P.Y. Delaunay, M. Razeghi and M.Z. Tidrow, “Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate,” Appl. Phys. Lett. 94, 223506 (2009)

Courses Taught

  • ECE 340 - Semiconductor Electronics