Job Opportunities: Research Engineer

Research Engineer/Senior Research Engineer/Principal Research Engineer

The College of Engineering at the University of Illinois at Urbana-Champaign (UIUC) seeks applicants for a Research Engineer position at one of three different levels for the Holonyak Micro and Nanotechnology Laboratory (HMNTL). The levels are Research Engineer, Senior Research Engineer and Principal Research Engineer. All levels of professionals will be involved in facilitating research efforts being conducted in a cleanroom laboratory environment and to provide support and direction to laboratory users and co-workers generally associated with semiconductor epitaxial growth and including: managing equipment and tools involving hands-on equipment maintenance of the metalorganic chemical vapor deposition (MOCVD) systems and other equipment as assigned, conducting day to day semiconductor epitaxial growths to customer specifications and training of new users as required.

HMNTL is one of the country's largest and most sophisticated university facilities for conducting photonics, microelectronics, biotechnology, and nanotechnology research. Our 15 class 100 and 1000 cleanrooms, 46 general purpose labs, and 2,500 square foot biosafety level-2 bionanotechnology complex contain all the tools researchers need to conduct their work. More information about HMNTL can be found at https://mntl.illinois.edu/.

The University of Illinois is an Equal Opportunity, Affirmative Action employer. Minorities, women, veterans and individuals with disabilities are encouraged to apply. For more information, visit http://go.illinois.edu/EEO. To learn more about the University’s commitment to diversity, please visit http://www.inclusiveillinois.illinois.edu.

Research Engineer

Primary Position Function/Summary: The purpose of this position is to facilitate research efforts being conducted in a clean room laboratory environment and to provide support and direction to laboratory users and co-workers generally associated with semiconductor epitaxial growth and including: managing equipment and tools involving hands-on equipment maintenance of the metalorganic chemical vapor deposition (MOCVD) systems and other equipment as assigned, conducting day to day semiconductor epitaxial growths to customer specifications and training of new users as required.

Duties and Responsibilities:

Maintain and repair various processing tools operated within the Holonyak Micro and Nanotechnology Laboratory (HMNTL) cleanroom laboratories. Equipment primarily responsible for, but not limited to, includes systems such as metal-organic chemical vapor deposition (MOCVD) reactors for III-V compound semiconductors, low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), with MOCVD being the top priority.
Provide equipment operation training and instruction sets for users of the above systems.
Develop and run a program to operate one MOCVD reactor as a shared-use cost center, for which internal and external customers will pay for epitaxial crystal structure process development and small-volume epitaxial wafer process runs that will be performed by the research engineer.
Develop, characterize, and document processes that utilize the above-mentioned equipment.
Work with faculty, other staff, and researchers to develop new processes for new compound semiconductor-based substrate hetero-structures fundamental in the fabrication of compound semiconductor devices.
Consult, assist, and perform tasks as required by any contracted “foundry” work. In particular, the Aixtron MOCVD reactor will be a primary responsibility for the Research Engineer to operate and maintain in the context of a facility that will be available to external users for epitaxial layer process development. Responsibilities will include generation of cost data (materials, supplies, personnel time) to enable generation of price quotes and invoices to customers of the reactor.
Develop policies for usage, training, preventive maintenance, and process control to assure that fabrication process tools are operating within specifications as often as possible.
Gather and interpret statistical process control data for MOCVD crystal growth for monitoring and maintaining the process and equipment to keep them functioning at high equipment uptime and to high standards of material specifications.
Prepare and deliver training to HMNTL users on topics within area of expertise, which may include CVD process development, CVD system care and maintenance, statistical process control, and safety.
Continuously maintain training and certification for SCBA required to perform scheduled maintenance and tank changes for toxic gasses.
Working with a group of PhD candidates, Research staff, and Faculty, develop reproducible, high quality semiconductor hetero-structures for project and product device fabrication by participating in the specification, costing, and installation of new fabrication process systems.

Assume additional appropriate related research engineer duties to further the mission of the laboratory.

QUALIFICATIONS FOR RESEARCH ENGINEER:

Minimum Qualifications:

Bachelor’s degree in Engineering or related field.
At least 2 years of experience as an engineer working in a cleanroom laboratory environment with responsibility for hands-on maintenance, repair, and operation of a reactor system for epitaxial growth of arsenide and phosphide-based compound semiconductors.
At least 2 years of experience working with MOCVD systems, including deep familiarity with the safety precautions for the operation and maintenance of systems that utilize toxic gas (arsine, phosphine) and explosive gas (hydrogen, silane, dichlorosilane).
Demonstrated understanding of electrical and mechanical schematics.

Proficiency at diagnosing and repairing electromechanical systems and instrumentation.
Excellent oral and written communication skills, for communication with internal and external customers.

Preferred Qualifications:

Experience with metrology techniques that include x-ray diffraction, atomic force microscopy, photoluminescence, and Hall Effect measurements.
Experience in an Industrial environment or national laboratory with MOCVD epitaxial growth of arsenide and phosphide-based compound semiconductors.
Familiarity with approaches used for substrate preparation, reactor chamber cleaning, in situ process monitoring for chemical vapor deposition of semiconductor epitaxial layers .
Comprehensive understanding of vacuum systems, mass flow controllers, exhaust treatment, and leak detection methods as they pertain to chemical vapor deposition reactors.

Senior Research Engineer

Maintain and repair various processing tools operated within the Holonyak Micro and Nanotechnology Laboratory (HMNTL) cleanroom laboratories. Equipment primarily responsible for, but not limited to, includes systems such as metal-organic chemical vapor deposition (MOCVD) reactors for III-V compound semiconductors, low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), with MOCVD being the top priority.
Provide equipment operation training and instruction sets for users of the above systems.
Develop and run a program to operate one MOCVD reactor as a shared-use cost center, for which internal and external customers will pay for epitaxial crystal structure process development and small-volume epitaxial wafer process runs that will be performed by the research engineer.
Develop, characterize, and document processes that utilize the above-mentioned equipment.
Consult, assist, and perform tasks as required by any contracted “foundry” work. In particular, the Aixtron MOCVD reactor will be a primary responsibility for the Research Engineer to operate and maintain in the context of a facility that will be available to external users for epitaxial layer process development. Responsibilities will include generation of cost data (materials, supplies, personnel time) to enable generation of price quotes and invoices to customers of the reactor.
Develop policies for usage, training, preventive maintenance, and process control to assure that fabrication process tools are operating within specifications as often as possible.
Gather and interpret statistical process control data for MOCVD crystal growth for monitoring and maintaining the process and equipment to keep them functioning at high equipment uptime and to high standards of material specifications.
Prepare and deliver training to HMNTL users on topics within area of expertise, which may include CVD process development, CVD system care and maintenance, statistical process control, and safety.
Work with faculty, other staff, and researchers to develop new processes for new compound semiconductor-based substrate hetero-structures fundamental in the fabrication of compound semiconductor devices.
Continuously maintain training and certification for SCBA required to perform scheduled maintenance and tank changes for toxic gasses.
Working with a group of PhD candidates, Research staff, and Faculty, develop reproducible, high quality semiconductor hetero-structures for project and product device fabrication by participating in the specification, costing, and installation of new fabrication process systems.
Develop custom training course materials for new and existing researchers for best practices in crystal growth techniques, safety, and metrology.

Assume additional appropriate related senior research engineer duties to further the mission of the laboratory.

QUALIFICATIONS FOR SENIOR RESEARCH ENGINEER:

Minimum Qualifications:

Bachelor’s degree in Engineering or related field.
At least 5 years of experience as an engineer working in a cleanroom laboratory environment with responsibility for hands-on maintenance, repair, and operation of a reactor system for epitaxial growth of arsenide and phosphide-based compound semiconductors.
At least 5 years of experience working with MOCVD systems, including deep familiarity with the safety precautions for the operation and maintenance of systems that utilize toxic gas (arsine, phosphine) and explosive gas (hydrogen, silane, dichlorosilane).
Demonstrated understanding of electrical and mechanical schematics.

Proficiency at diagnosing and repairing electromechanical systems and instrumentation.
Excellent oral and written communication skills, for communication with internal and external customers.

Preferred Qualifications:

Experience with metrology techniques that include x-ray diffraction, atomic force microscopy, photoluminescence, and Hall Effect measurements.
Experience in an Industrial environment or national laboratory with MOCVD epitaxial growth of arsenide and phosphide-based compound semiconductors.
Familiarity with approaches used for substrate preparation, reactor chamber cleaning, in situ process monitoring for chemical vapor deposition of semiconductor epitaxial layers.
Comprehensive understanding of vacuum systems, mass flow controllers, exhaust treatment, and leak detection methods as they pertain to chemical vapor deposition reactors.

Principal Research Engineer

Maintain and repair various processing tools operated within the Holonyak Micro and Nanotechnology Laboratory (HMNTL) cleanroom laboratories. Equipment primarily responsible for, but not limited to, includes systems such as metal-organic chemical vapor deposition (MOCVD) reactors for I11-V compound semiconductors, low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), with MOCVD being the top priority.
Provide equipment operation training and instruction sets for users of the above systems.
Develop and run a program to operate one MOCVD reactor as a shared-use cost center, for which internal and external customers will pay for epitaxial crystal structure process development and small-volume epitaxial wafer process runs that will be performed by the research engineer.
Develop, characterize, and document processes that utilize the above-mentioned equipment.
Consult, assist, and perform tasks as required by any contracted "foundry" work. In particular, the Aixtron MOCVD reactor will be a primary responsibility for the Research Engineer to operate and maintain in the context of a facility that will be available to external users for epitaxial layer process development. Responsibilities will include generation of cost data (materials, supplies, personnel time) to enable generation of price quotes and invoices to customers of the reactor.
Develop policies for usage, training, preventive maintenance, and process control to assure that fabrication process tools are operating within specifications as often as possible.
Gather and interpret statistical process control data for MOCVD crystal growth for monitoring and maintaining the process and equipment to keep them functioning at high equipment uptime and to high standards of material specifications.
Prepare and deliver training to HMNTL users on topics within area of expertise, which may include CVD process development, CVD system care and maintenance, statistical process control, and safety.
Continuously maintain training and certification for SCBA required to perform scheduled maintenance and tank changes for toxic gasses.
Work with faculty, other staff, and researchers to develop new processes for new compound semiconductor-based substrate hetero-structures fundamental in the fabrication of compound semiconductor devices.
Working with a group of PhD candidates, Research staff, and Faculty, develop reproducible, high quality semiconductor hetero-structures for project and product device fabrication by participating in the specification, costing, and installation of new fabrication process systems.
Develop custom training course materials for new and existing researchers for best practices in crystal growth techniques, safety, and metrology.
Coordinate with research groups in developing crystal growth recipes to meet engineering design specifications, which may include significant contributions to research and co-author conference, workshop, and journal papers where appropriate.
Assume additional appropriate related principal research engineer duties to further the mission of the laboratory.

QUALIFICATIONS FOR PRINCIPAL RESEARCH ENGINEER:

Minimum Qualifications:

Master’s degree in Engineering or related field, with 10 years’ experience working with MOCVD systems;
Or, alternately, PhD degree in Engineering or related field, with 5 years’ experience working with MOCVD systems.
At least 10 years of experience as an engineer working in a cleanroom laboratory environment with responsibility for hands-on maintenance, repair, and operation of a reactor system for epitaxial growth of arsenide and phosphide-based compound semiconductors.
At least 10 years of experience working with MOCVD systems, including deep familiarity with the safety precautions for the operation and maintenance of systems that utilize toxic gas (arsine, phosphine) and explosive gas (hydrogen, silane, dichlorosilane).
Demonstrated understanding of electrical and mechanical schematics.
Proficiency at diagnosing and repairing electromechanical systems and instrumentation.

Responsible for managing costs and charge rates for operation of a cleanroom tool and/or laboratory, dealing with customer service and tracking ongoing expenses and income, and active marketing and promotion of cleanroom tools to industry and other outside customers.
Excellent oral and written communication skills, for communication with internal and external customers.

Preferred Qualifications:

Experience with metrology techniques that include x-ray diffraction, atomic force microscopy, photoluminescence, and Hall Effect measurements.
Experience in an Industrial environment or national laboratory with MOCVD epitaxial growth of arsenide and phosphide-based compound semiconductors.
Familiarity with approaches used for substrate preparation, reactor chamber cleaning, in situ process monitoring for chemical vapor deposition of semiconductor epitaxial layers.
Comprehensive understanding of vacuum systems, mass flow controllers, exhaust treatment, and leak detection methods as they pertain to chemical vapor deposition reactors.

The Research Engineer position is a full-time, benefits-eligible academic professional position appointed on a 12-month service basis. The expected start date is as soon as possible after the closing date. Applicants may be interviewed before the closing date; however, no hiring decision will be made until after that date. Salary is commensurate with experience and qualifications.

To apply for this position, please create your candidate profile at http://jobs.illinois.edu and upload your cover letter, resume, and names/contact information for three references by November 26, 2018. Full consideration will be given to complete applications received by the closing date. For further information regarding application procedures, contact Leslie Lewin Reinhart, lewin@illinois.edu, 217-300-3872.

The University of Illinois conducts criminal background checks on all job candidates upon acceptance of a contingent offer.