Coupled InAs Qunatum Dot InGaAs Quantum Well InAs-InGaAs-GaAs-AlGaAs Heterostructure Diode Lasers

[1] T. Chung, G. Walter, and N. Holonyak, Jr., "Coupled Strained Layer InGaAs Quantum Well Improvement of an InAs Quantum Dot AlGaAs-GaAs-InGaAs-InAs Heterostructure Laser," Appl. Phys. Lett., vol. 79, pp. 4500-4502, 2001.
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[2] G. Walter, T. Chung,  and N. Holonyak, Jr., "High Gain Coupled InGaAs Quantum Well InAs Quantum Dot AlGaAs-GaAs-InGaAs-InAs Heterostructure Diode Laser Operation," Appl. Phys. Lett., vol. 80, pp. 1126-1128, 2002.

[3] G. Walter, T. Chung,  and N. Holonyak, Jr., "Coupled-Stripe Quantum-Well-Assisted AlGaAs-GaAs-InGaAs-InAs Quantum-Dot Laser," Appl. Phys. Lett., vol. 80, pp. 3045-3047, 2002.
 

Coupled InP Qunatum Dot InGaP Quantum Well InP-InGaP-In(AlGa)P-InAlP Heterstructure Diode Lasers

• in collboration with Professor Dupuis's group at University of Texas at Austin

[2] G. Walter, N. Holonyak Jr.,  J. H. Ryou,R. D. Dupuis,  "Room Temperature Continuous Photopumped Laser Operation of Coupled InP Quantum Dot and InGaP Quantum Well InP-InGaP-In(AlGa)P-InAlP Heterstructures " Appl. Phys. Lett., vol. 79, pp. 1956-1958, 2001.

[3] G. Walter, N. Holonyak Jr.,  J. H. Ryou,R. D. Dupuis,  "Coupled InP Quantum Dot and InGaP Quantum Well InP-InGaP-In(AlGa)P-InAlP Heterstructure Diode Laser Operation" Appl. Phys. Lett., vol. 79, pp. 3215-3217, 2001.

[4] J. H. Ryou, R. D. Dupuis, G. Walter, D. A. Kellogg, N. Holonyak Jr., D. T. Mathes, R. Hull, C. V. Reddy, and V. Narayanamurti,  "Properties of InP Self-Assembled Qunatum Dots in In0.49(AlxGa1-x)0.51P For Visible Light Emitting Diode and Laser Applications Grown by Metalorganic Chemical Vapor Deposition," J. Appl. Phys., vol 91, pp. 5313-5320, 2002.