Facilities
Highlights
Leica/Cambridge EBMF 10.5 Electron Beam Lithography System
Description:
The Leica/Cambridge EBMF 10.5 provides general purpose; electron-beam lithographic capability. The EBMF 10.5 is capable of a resolution of about 80 nm. Placement and automated alignment accuracies of 100 nm over a 3 mm field are achieved by infield distortion, focus, and height corrections. The maximum writing speed is 10 MHz with a 15-bit pattern generator. Almost any flat substrate material, including wafers and masks, up to five inches in size can be accommodated.
Features:
- Optimized for flexibility and throughput
- Gaussian beam, vector scan
- Beam energy from 5-40 KeV, normally kept at 40 KeV
- Beam currents from .500 pA to 500 nA
- Beam diameters from 50 to 500 nm
- Substrates from 5 to 125 mm
- Exposure field size from 0.080 to 4.0 mm square
- Sophisticated job control language executes interactively or in batch mode
- Used for structures as small as 80 nm
- Used for both direct write and mask making