Facilities
Highlights
JEOL JBX-6000FS Electron Beam Lithography System
System Description:
The JBX-6000FS/E is an electron beam lithography system equipped with a thermal field emission electron gun with ZrO/W emitter. The accelerating voltage is normally operated at 50kV. It is used for research that requires ultra fine pattern exposure with resolution down to 10nm routinely achieved in PMMA resist. It incorporates two different objective lenses with maximum field size of 80 and 800 micron respectively. Field stitching error is typically less than 40nm. Standard sample holder can accomodate 2", 3" 4" and 6" wafer. Pieces holder can be use for smaller sample with sample size from 1 to 3cm. GDSII format CAD file will be converted to the scanner format for exposure.
For more information contact Edmond Chow (echow@uiuc.edu)
Email to all JEOL users (MNTL-JEOL-Users@ad.uiuc.edu)
Last Updated: Aug 2009
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100nm pitch grating | |
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10nm diameter dot | |
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75nm pitch grating | |
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10nm line | |
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100nm triangle with 10nm gap | |
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10nm stitching error |