GCA DSW-6100 G-Line Series Wafer Stepper
uses a g-line (436 nm) lens column ( 0.30 N/A) to provide a
5:1 reduction with a variable field size up to 2 cm square.
The number and placement of the dies is programmable. Minimum
feature size is less than 0.9 um. Various diameter wafers can
be accommodated, as well as smaller pieces. 5" reticles
are used. There are some restrictions on what substrate thicknesses
can be accommodated in this system.
Step and repeat exposure system with laser-controlled
Zeiss 5X reduction lens with 0.30 numerical aperture
G-line (436 nm) exposure wavelength
20 x 20 mm field size
Resolution to 0.9 µm
Overlay accuracy to <0.25 µm
For more information contact John Hughes